princip al device types 2n4391 2n4392 2n4393 cmpf4391 cmpf4392 cmpf4393 process epitaxial planar die size 21 x 18 mils die thickness 8.0 mils drain bonding pad area 3.8 x 3.8 mils source bonding pad area 3.8 x 3.8 mils gate bonding pad area 3.8 x 3.8 mils top side metalization al - 30,000? back side metalization au - 6,000? process details geometry backside gate 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r3 (9 -september 2003) gross die per 4 inch w afer 30,950 central semiconductor corp. tm process CP206 small signal transistors n - channel switch/chopper j fet chip
process CP206 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r3 (9 -september 2003) central semiconductor corp. tm
process CP206 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r3 (9 -september 2003) central semiconductor corp. tm
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